Solid state image sensing device and manufacturing and...

Details Solid state image sensing device and manufacturing and... Solid state image sensing device and manufacturing and...

2007-03-20

2007-03-20

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S294000, C257S423000, C257S414000

Reexamination Certificate

active

11044864

ABSTRACT:
A solid state image sensing device is composed of a second conductive type well area33,a photoelectric conversion area40,a ring shaped gate electrode35,a transfer gate electrode41,a second conductive type drain area38,a second conductive type source area36,and a first conductive type source neighborhood area37.

REFERENCES:
patent: 60-206063 (1985-10-01), None
patent: 10-041493 (1998-02-01), None
patent: 11-195778 (1999-07-01), None
patent: 2001-160620 (2001-06-01), None

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