Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-07-03
2007-07-03
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000
Reexamination Certificate
active
11245325
ABSTRACT:
The present invention provides a storage apparatus including a variable resistance element having a recording layer between two electrodes. In the variable resistance element, a resistance value of the recording layer is reversibly changed to one of a value in a high-resistance state and a value in a low-resistance state by applying potentials of different polarities to the two electrodes. An absolute value of a threshold value of an applied signal at a time of change from the high-resistance state to the low-resistance state and an absolute value of a threshold value of an applied signal at a time of change from the low-resistance state to the high-resistance state differ from each other. A reading signal for detecting the resistance value of the recording layer in the variable resistance element is applied with a polarity of one of the threshold values of the applied signals which one has a higher absolute value and with a value lower than the absolute value.
REFERENCES:
patent: 6724651 (2004-04-01), Hirai
patent: 6826076 (2004-11-01), Asano et al.
patent: 6956766 (2005-10-01), Nakamura et al.
patent: 7110285 (2006-09-01), Inaba
Hachino Hidenari
Ootsuka Wataru
Tsushima Tomohito
Phung Anh
Sonnenschein Nath & Rosenthal LLP
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