Method for making a stack of capacitors, in particular for...

Details Method for making a stack of capacitors, in particular for... Method for making a stack of capacitors, in particular for...

2007-05-29

2007-05-29

Tsai, H. Jey (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S308000, C257SE21648

Reexamination Certificate

active

10129881

ABSTRACT:
The invention concerns a method which consists in forming on a substrate (1) coated with a dielectric material layer (3) provided with a window (3a), a stack of successive layers alternately of germanium or SiGe alloy (4, 6, 8) and polycrystalline silicon (5, 7, 9); selective partial elimination of the germanium or SiGe alloy layers, to form an tree-like structure; forming a thin layer of dielectric material (10) on the tree-like structure; and coating the tree-like structure with polycrystalline silicon (11). The invention is useful for making dynamic random-access memories.

REFERENCES:
patent: 5155657 (1992-10-01), Oehrlein et al.
patent: 5622882 (1997-04-01), Yee
patent: 6127220 (2000-10-01), Lange et al.

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