Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-03
2007-04-03
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S366000, C257S379000, C257S903000, C257SE27098
Reexamination Certificate
active
11098671
ABSTRACT:
A semiconductor memory includes first to sixth ridges, an insulating layers on the first to sixth ridges, a first gate line above the first to fourth ridges, and a second gate line above the third to sixth ridges, wherein the first and sixth ridges, the insulating layers, and the first and second gate lines implement first and second capacitors, the second and third ridges and the first gate line implement first driver and load transistors, and the fourth and fifth ridges and the second gate lines implement second load and driver transistors.
REFERENCES:
patent: 5825684 (1998-10-01), Lee
patent: 6781869 (2004-08-01), Ohbayashi et al.
patent: 6-291283 (1994-10-01), None
patent: 2003-297954 (2003-10-01), None
Notice of Rejection issued by the Korean Patent Office on Sep. 26, 2006, for Korean Patent Application No. 10-2005-0029487, and English-language translation thereof.
Ho Tu-Tu
Kabushiki Kaisha Toshiba
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