Laterally diffused metal oxide semiconductor device and...

Details Laterally diffused metal oxide semiconductor device and... Laterally diffused metal oxide semiconductor device and...

2007-07-17

2007-07-17

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S336000, C257S338000, C257S341000, C257S343000, C257S374000

Reexamination Certificate

active

11286929

ABSTRACT:
A transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the laterally diffused metal oxide semiconductor device includes a source/drain having a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The laterally diffused metal oxide semiconductor device further includes an oppositely doped well located under and within the channel region, and a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region.

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