Multi-layer semiconductor integrated circuits enabling...

Details Multi-layer semiconductor integrated circuits enabling... Multi-layer semiconductor integrated circuits enabling...

2007-07-10

2007-07-10

Visconti, Geraldina (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S312000, C430S320000

Reexamination Certificate

active

10284327

ABSTRACT:
Stabilization of photolithography process parameters, the photomask being used, and the manufacturing method thereof is provided where a formal pattern layout is combined with a dummy pattern. A photomask is manufactured by utilizing the combined pattern layout so that density changes between the pattern structure layers of the multi-layer semiconductor integrated circuits are minimized.

REFERENCES:
patent: 6482559 (2002-11-01), Lin
patent: 2003/0088849 (2003-05-01), Yamauchi

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