Forming system for insulation film

Details Forming system for insulation film Forming system for insulation film

2007-01-23

2007-01-23

Owens, Douglas W. (Department: 2811)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

C118S7230ER, C438S216000, C438S261000, C438S287000, C438S421000, C438S591000, C438S595000, C438S954000, C438S981000, C438S778000, C438S788000, C438S792000

Reexamination Certificate

active

10487986

ABSTRACT:
The silicon oxide film (106) and silicon nitride film (107) are formed by microwave plasma processing with a radial line slot antenna.

REFERENCES:
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6072221 (2000-06-01), Hieda
patent: 6158383 (2000-12-01), Watanabe et al.
patent: 6399520 (2002-06-01), Kawakami et al.
patent: 2002/0014666 (2002-02-01), Ohmi et al.
patent: 11293470 (1999-10-01), None
patent: 2000294550 (2000-10-01), None
patent: 2001-160555 (2001-06-01), None
patent: WO 00/01008 (2000-01-01), None
European Search Report Dated Oct. 6, 2005 (Three (3) Pages).

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