Semiconductor device

Details Semiconductor device Semiconductor device

2007-07-03

2007-07-03

Tran, Anh Q. (Department: 2819)

Electronic digital logic circuitry

Interface

Current driving

C326S063000, C326S068000, C326S083000

Reexamination Certificate

active

11253678

ABSTRACT:
A semiconductor device includes insulated and separated transistor elements successively connected to one another between ground potential and a predetermined potential. A transistor element at the GND potential side is a first stage and a transistor element at the predetermined potential side is an n-th stage. Resistance elements or capacitance elements are successively connected to one another in series between the GND potential and the predetermined potential. A resistance or capacitance element at the GND potential side is a first stage and a resistance or capacitance element at the predetermined potential side is an n-th stage. Gate terminals of the transistor elements at the respective stages excluding the transistor element at the first stage are successively connected to connection points. An output is taken from the terminal at the predetermined potential side of the transistor element of the n-th stage.

REFERENCES:
patent: 3551788 (1970-12-01), Summer
patent: 5736774 (1998-04-01), Fujihira
patent: 2002/0125935 (2002-09-01), Sawada et al.
patent: 2002/0186518 (2002-12-01), Nishikawa et al.
patent: 1999-0065165 (1999-08-01), None
Akiyama et al. “Mitsubishi. Changes for the better.” Mitsubishi Electric Corporation. International Symposium on Power Semiconductor Devices, 2004. (Discussed on p. 1 in the specification).
Notice of Preliminary Rejection from Korean Patent Office issued on Nov. 20, 2006 for the corresponding Korean patent application No. 10-2005-0099902 (a copy and English translation thereof).

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