Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-05-29
2007-05-29
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S253000, C438S045000, C438S200000, C438S158000, C438S527000, C257S410000, C257S411000, C257S412000, C257S415000, C257S324000, C257SE21130, C257SE21178, C349S046000, C349S120000, C349S140000, C349S150000
Reexamination Certificate
active
11074671
ABSTRACT:
A method for manufacturing a semiconductor device by a small number of processes and by a means with high usability of materials to have high-definition and a gate insulating with a high step coverage property is disclosed. According to the present invention, a method for manufacturing a semiconductor device comprises the steps of forming a plurality of first conductive layers over a substrate; forming a first insulating layer to fill the gaps of the plurality of the first conductive layers; forming a second insulating layer over the first insulating layer and the plurality of the first conductive layers; and forming a semiconductor region and a second conductive layer over the second insulating layer.
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Ahmadi Mohsen
Costellia Jeffrey L.
Lebentritt Michael
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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