Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-09-25
2007-09-25
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S758000, C438S759000, C257SE21545
Reexamination Certificate
active
11115854
ABSTRACT:
The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D2, HD, DT, T2and TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing H2under otherwise substantially identical conditions.
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Nguyen S V: “High-Density Plasma Chemical Vapor Deposition of Silicon-Based Dielectric Films for Integrated Circuits” IBM Journal of Research and Development, IBM Corporation, Armonk, US, vol. 43, No. 1/2, Jan. 1999, pp. 109-126.
Budge William
Li Weimin
Rueger Neal R.
Sandhu Gurtej S.
Kebede Brook
Micro)n Technology, Inc.
Wells St. John P.S.
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