Methods for forming a metal contact in a semiconductor...

Details Methods for forming a metal contact in a semiconductor... Methods for forming a metal contact in a semiconductor...

2007-05-29

2007-05-29

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S630000, C438S648000, C438S651000, C257SE21593

Reexamination Certificate

active

11112356

ABSTRACT:
A metal contact in a semiconductor device is formed by forming an insulating layer having a contact hole therein on a silicon substrate. A cobalt layer is formed on a bottom and inner walls of the contact hole. A cobalt silicide layer is formed at the bottom of the contact hole while forming a titanium layer on the cobalt layer. A plug is formed on the titanium layer so as to fill the contact hole.

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