Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2007-09-04
2007-09-04
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S557000, C257SE27053, C257SE27074, C257S556000, C257S555000
Reexamination Certificate
active
10767419
ABSTRACT:
A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.
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Chan Wai Tien
Cornell Michael E.
Williams Richard K.
Advanced Analogic Technologies (Hong Kong) Limited
Advanced Analogic Technologies, Inc.
Steuber David E.
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