Magneto-resistance effect element and magnetic memory

Details Magneto-resistance effect element and magnetic memory Magneto-resistance effect element and magnetic memory

2007-09-04

2007-09-04

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S158000, C365S066000, C365S173000, C365S171000

Reexamination Certificate

active

11368496

ABSTRACT:
The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.

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