Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-03-27
2007-03-27
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C065S374150, C117S200000, C117S900000
Reexamination Certificate
active
11020858
ABSTRACT:
A crucible for the growth of single crystals by the Czochralski method which can enhance the productivity, yield and quality of crystal and a single crystal growing method, wherein the crucible has an inner bottom surface, the profile of which has at least one raised portion symmetrical about the rotary axis of the crucible wherein the periphery of the raised portion is positioned at a distance of from 0.4 to 1.2 times the radius of crystal to be grown from the rotary axis and the height of the raised portion is generally not smaller than 7% and greater than 100% of the radius of crystal to be grown.
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Kishida Yutaka
Tamaki Teruyuki
Brooks & Kushman P.C.
Hiteshew Felisa
Siltronic AG
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