Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-03
2007-07-03
Owens, Douglas W. (Department: 2821)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S758000
Reexamination Certificate
active
10920176
ABSTRACT:
The short circuit between the bit line and thee cell contact can be prevented without considerably increasing the number of the manufacturing processes. The bit line6electrically coupled to the cell contact9is formed of the material, which is same as the material of cell contact9. In the process for forming the bit line6on the cell contact interlayer film8by etching, the etching for creating an upper surface of the cell contact9that is not coupled to the bit line6being lower than an upper surface of the cell contact9that is coupled to the bit line6. Further, after the formation of the bit line6, the barrier metal layer5formed on the lower surface of the bit line6is selectively etched.
REFERENCES:
patent: 5204286 (1993-04-01), Doan
patent: 5895947 (1999-04-01), Lee et al.
patent: 2001-257325 (2001-09-01), None
Inoue Ken
Inoue Tomoko
NEC Electronics Corporation
Owens Douglas W.
Young & Thompson
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