Package assembly for electronic device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip

Reexamination Certificate

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Details

C257SE23125, C257SE21511, C257S780000, C257S698000, C257S783000, C257S782000, C257S668000, C257S737000, C257S738000, C257S772000, C257S779000, C257S734000, C257S691000

Reexamination Certificate

active

10671334

ABSTRACT:
A buffer layer is formed on a substrate and then electronic devices are packed on the buffer layer in the present invention, and problems of lower hermeticity and complex process in the conventional arts can be avoided. Therefore, the present invention provides a packaging structure and method with a better hermeticity and a simpler process. Especially, due to the buffer layer, the planarization for flip-chip bonding can be improved and reduce negative effects of the packing process.

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