Semiconductor device having multiple control gates

Details Semiconductor device having multiple control gates Semiconductor device having multiple control gates

1996-05-17

1998-08-25

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, H01L 2976, H01L 29788

Patent

active

057985480

ABSTRACT:
A semiconductor device includes a semiconductor substrate, source and drain regions defined in the semiconductor substrate with a channel region therebetween, a first insulating layer located over the semiconductor substrate including over the channel region, a floating gate locating over the first insulating layer, a second insulating layer located over the floating gate, a first control gate located over the second insulating layer, a third insulating layer located over the first control gate, a second control gate located over the third insulating layer. The first and second control gates allow the injection of hot carriers onto the floating gate from the first control gate when predetermined first and second voltages are applied to the first and second control gates, respectively.

REFERENCES:
patent: 4577215 (1986-03-01), Stewart et al.
patent: 5111430 (1992-05-01), Morie
patent: 5194924 (1993-03-01), Komori et al.
patent: 5464784 (1995-11-01), Crisenta et al.
patent: 5554869 (1996-09-01), Chang

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