Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-24
2007-07-24
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S462000, C257SE27133, C257SE31053, C257SE31084
Reexamination Certificate
active
10937382
ABSTRACT:
In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled.In a photoelectric conversion device which is constructed in such a manner that on the whole area of a substrate of a specific conduction type there are disposed a buried layer of a conduction type opposite to the conduction type of the substrate and an epitaxial layer of the same conduction type as the conduction type of the substrate and that well of a conduction type opposite to the conduction type of the substrate are present in a part of the epitaxial layer, buried layer for well isolation of the same conduction type as the conduction type of the substrate which have a higher concentration than the epitaxial layer is disposed between the lower part of the well and the buried layer.
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Kimura Takayuki
Kuwabara Hideshi
Shinohara Mahito
Yuzurihara Hiroshi
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Jackson Jerome
Warren Matthew E.
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