Method of forming a dual damascene metal trace with reduced...

Details Method of forming a dual damascene metal trace with reduced... Method of forming a dual damascene metal trace with reduced...

2007-05-29

2007-05-29

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S381000, C438S622000, C438S643000, C438S653000, C438S687000, C438S692000, C438S725000, C257SE21579

Reexamination Certificate

active

10727451

ABSTRACT:
The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.

REFERENCES:
patent: 3573540 (1971-04-01), Osepchuk
patent: 4165558 (1979-08-01), Armitage, Jr. et al.
patent: 4541893 (1985-09-01), Knight
patent: 5434094 (1995-07-01), Kobiki et al.
patent: 5472901 (1995-12-01), Kapoor
patent: 5741741 (1998-04-01), Tseng
patent: 5952704 (1999-09-01), Yu et al.
patent: 5976972 (1999-11-01), Inohara et al.
patent: 5986346 (1999-11-01), Katoh
patent: 5998299 (1999-12-01), Krishnan
patent: 6051470 (2000-04-01), An et al.
patent: 6107177 (2000-08-01), Lu et al.
patent: 6150725 (2000-11-01), Misawa et al.
patent: 6191023 (2001-02-01), Chen
patent: 6197682 (2001-03-01), Drynan et al.
patent: 6218302 (2001-04-01), Braeckelmann et al.
patent: 6232215 (2001-05-01), Yang
patent: 6258720 (2001-07-01), Gris
patent: 6277727 (2001-08-01), Kuo et al.
patent: 6281135 (2001-08-01), Han et al.
patent: 6326673 (2001-12-01), Liou
patent: 6362012 (2002-03-01), Chi et al.
patent: 6413832 (2002-07-01), Wu et al.
patent: 6417087 (2002-07-01), Chittipeddi et al.
patent: 6437385 (2002-08-01), Bertin et al.
patent: 6444517 (2002-09-01), Hsu et al.
patent: 6495469 (2002-12-01), Yang et al.
patent: 6566242 (2003-05-01), Adams et al.
patent: 6613668 (2003-09-01), Meijer et al.
patent: 6703710 (2004-03-01), Hopper et al.
patent: 2002/0024150 (2002-02-01), Farrar
patent: 2002/0151165 (2002-10-01), Chung
U.S. Appl. No. 10/219,896, filed Feb. 1971, Hopper et al.
U.S. Appl. No. 10/219,235, filed Nov. 1970, Hopper et al.
U.S. Appl. No. 10/219,212, filed Nov. 1970, Hopper et al.

Affiliated with

Also associated with

Rating

Method of forming a dual damascene metal trace with reduced... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a dual damascene metal trace with reduced..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a dual damascene metal trace with reduced... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3764244