Pecvd silicon oxide thin film deposition

Details Pecvd silicon oxide thin film deposition Pecvd silicon oxide thin film deposition

2007-04-03

2007-04-03

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S787000, C257SE21190, C257SE21279

Reexamination Certificate

active

10420417

ABSTRACT:
A method of depositing a gate dielectric layer for a thin film transistor is provided. The gate dielectric layer is deposited using a plasma enhanced deposition with a gas mixture comprising a silicon and chlorine containing compound.

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U.S. Appl. No. 10/254,627, filed on Sep. 24, 2002 (AMAT/6320).

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