Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-12-27
1998-08-25
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257302, 257304, 257305, 437 52, 437 60, 365149, H01L 27108, H01L 2976, H01L 2994
Patent
active
057985456
ABSTRACT:
A semiconductor substrate has two element forming regions and one element separation region between the two element forming regions. A shield electrode for electrically separating the two element forming regions is formed in the semiconductor substrate at the element separating region. A trench capacitor is formed in the semiconductor substrate at the element separation region. The trench capacitor has a trench, a first conductive layer covering at least the inner wall of the trench, a dielectric layer formed at least on the first conductive layer in the trench, and a second conductive layer formed at least on the dielectric layer in the trench. The shield electrode and the first conductive layer is made of the same layer. A transistor having a pair of impurity doped regions is formed in the semiconductor substrate at the element forming region, the second conductive layer of the trench capacitor is electrically connected to one of the pair of impurity doped regions of the transistor.
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N. Lu et al., The SPT Cell -A New Substate-Plate Trench Cell for DRAMs, IEDM 85, pp. 771-772, 1985.
Iwasa Shoichi
Tani Tomofune
Martin Wallace Valencia
Nippon Steel Corporation
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