Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-09-04
2007-09-04
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S693000, C252S079100
Reexamination Certificate
active
11259645
ABSTRACT:
The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.
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Brusic Vlasta
Thompson Christopher C.
Zhou Renjie
Cabot Microelectronics Corporation
Chen Kin-Chan
Koszyk Francis J.
Omholt Thomas
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