Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-20
2007-03-20
Lindsay, Jr., Walter L. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S412000, C257S413000, C257S392000, C257S192000, C257S321000, C257S369000, C257SE29252, C257SE29315, C257SE29295, C257SE29151
Reexamination Certificate
active
11039543
ABSTRACT:
One-transistor ferroelectric memory devices using an indium oxide film (In2O3), an In2O3film structure, and corresponding fabrication methods have been provided. The method for controlling resistivity in an In2O3film comprises: depositing an In film using a PVD process, typically with a power in the range of 200 to 300 watts; forming a film including In overlying a substrate material; simultaneously (with the formation of the In-including film) heating the substrate material, typically the substrate is heated to a temperature in the range of 20 to 200 degrees C.; following the formation of the In-including film, post-annealing, typically in an O2 atmosphere; and, in response to the post-annealing: forming an In2O3film; and, controlling the resistivity in the In2O3film. For example, the resistivity can be controlled in the range of 260 to 800 ohm-cm.
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Hsu Sheng Teng
Li Tingkai
Law Office of Gerald Maliszewski
Lindsay Jr. Walter L.
Maliszewski Gerald
Sharp Laboratories of America Inc.
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