Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-20
2007-03-20
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S307000, C257S308000, C257S309000, C257S310000
Reexamination Certificate
active
11109405
ABSTRACT:
An electronic component and method of production thereof is presented. The electronic component includes a first insulation layer, an upper metal layer on the first insulation layer, an electrically conductive structure integrated into the first insulation layer and formed as a capacitor with a first metal strip sequence, and a second metal strip sequence. Each of the first and second sequences are arranged congruently one above another and are connected to one another by via connections. The second sequence is arranged on both sides of the first sequence at identical lateral distances. The metal strips of the first and second sequences are arranged at the same level and are connected to different electrical potentials. The electrically conductive structure mechanically stabilizes the insulation layer under the action of mechanical force such as bonding of the upper metal layer or mounting of the electronic component.
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Brinks Hofer Gilson & Lione
Tran Thien F
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