Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-04-03
2007-04-03
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S233100, C365S194000, C365S230030
Reexamination Certificate
active
10931564
ABSTRACT:
A dynamic random access memory device includes a mode register that is programmed with a delay value. In some embodiments, a offset code is also stored in the memory device. The memory device uses the delay value, which may be added to or multiplied by the offset code, to delay the initiation of a received auto-refresh or self-refresh command. A large number of dynamic random access memory devices in a system may be provided with different delay values and possibly offset codes so that the memory device do not all perform refreshes simultaneously in response to an auto-refresh or self-refresh command issued to all of the memory devices simultaneously. As a result, the peak current drawn by the memory devices resulting from the auto-refresh command or self-refresh command is maintained at a relatively low value.
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Janzen Jeffery W.
Kinsely Thomas H.
Dorsey & Whitney LLP
Nguyen Viet Q.
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