DRAM access transistor

Details DRAM access transistor DRAM access transistor

2007-04-17

2007-04-17

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257SE29260

Reexamination Certificate

active

10962665

ABSTRACT:
Self-aligned recessed gate structures and method of formation are disclosed. Field oxide areas for isolation are first formed in a semiconductor substrate. A plurality of columns are defined in an insulating layer formed over the semiconductor substrate subsequent to which a thin sacrificial oxide layer is formed over exposed regions of the semiconductor substrate but not over the field oxide areas. A dielectric material is then provided on sidewalls of each column and over portions of the sacrificial oxide layer and of the field oxide areas. A first etch is conducted to form a first set of trenches within the semiconductor substrate and a plurality of recesses within the field oxide areas. A second etch is conducted to remove dielectric residue remaining on the sidewalls of the columns and to form a second set of trenches. Polysilicon is then deposited within the second set of trenches and within the recesses to form recessed conductive gates.

REFERENCES:
patent: 5268587 (1993-12-01), Murata et al.
patent: 5362665 (1994-11-01), Lu
patent: 5540812 (1996-07-01), Kadomura
patent: 6037194 (2000-03-01), Bronner et al.
patent: 6037263 (2000-03-01), Chang
patent: 6093947 (2000-07-01), Hanafi et al.
patent: 6151248 (2000-11-01), Harari et al.
patent: 6340614 (2002-01-01), Tseng
patent: 6617213 (2003-09-01), Hummler
patent: 6635534 (2003-10-01), Madson
patent: 6717210 (2004-04-01), Takano et al.
patent: 2001/0014533 (2001-08-01), Sun
patent: 2001/0025973 (2001-10-01), Yamada, et al.
patent: 2001/0033000 (2001-10-01), Mistry
patent: 2002/0102817 (2002-08-01), Chen et al.
patent: 2003/0020102 (2003-01-01), Gajda
patent: 2003/0168680 (2003-09-01), Hsu
patent: 2004/0000686 (2004-01-01), Houston
patent: 2004/0053169 (2004-03-01), Kindt
patent: 2004/0071267 (2004-04-01), Jacob et al.
patent: 1 326 280 (2003-07-01), None

Affiliated with

Also associated with

Rating

DRAM access transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with DRAM access transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and DRAM access transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3756213