Method of selective area epitaxial growth using ion beams

Details Method of selective area epitaxial growth using ion beams Method of selective area epitaxial growth using ion beams

1986-01-08

1986-11-11

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

357 16, C30B 2504

Patent

active

046220933

ABSTRACT:
A method of selective area epitaxial growth using a scanning ion beam is described.

REFERENCES:
patent: 3615931 (1971-10-01), Arthur
patent: 3928092 (1975-12-01), Ballamy et al.
patent: 4227961 (1980-10-01), Takagi
patent: 4233613 (1980-11-01), Morimoto
Vossen et al., Thin Film Processes, Academic Press N.Y. 1978, p. 198.
Zalm et al., Applied Phys. Lett. V41, No. 2, Jul. 15, 1982, pp. 167-169.
Hakata et al. Applied Phy. Lett. V40, No. 8, 4/15/82, pp. 686-688.
Seliger et al. Applied Phy. Lett. V34, No. 5, 3/1/79, pp. 310-312.
Oyabv, Jl of the Vacuum Society of Japan, V20, No. 7 7/77, pp. 241-246 (with translation).

Affiliated with

Also associated with

Rating

Method of selective area epitaxial growth using ion beams does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of selective area epitaxial growth using ion beams, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of selective area epitaxial growth using ion beams will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-375550