Semiconductor device

Details Semiconductor device Semiconductor device

2007-04-03

2007-04-03

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S379000, C257S382000, C257S401000, C257S532000, C257S618000, C257S632000

Reexamination Certificate

active

11140181

ABSTRACT:
A memory region including a capacitor element, a logic region including a logic circuit, and a boundary region located between the memory region and the logic region are provided on a silicon substrate. The memory region includes a plurality of memory transistors and memory transistor connection plugs. The boundary region includes a dummy contact plug in the same layer as the memory transistor connection plugs and logic transistor connection plugs. The upper face of the dummy contact plug is covered with a second insulating layer. An end portion of a capacitor layer and an upper electrode is located closer to an inner region of the memory region than the dummy contact plug is.

REFERENCES:
patent: 6537874 (2003-03-01), Nakamura et al.
patent: 2001-068636 (2001-03-01), None
patent: 2003-100910 (2003-04-01), None

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