Method for manufacturing semiconductor device, and laser...

Details Method for manufacturing semiconductor device, and laser... Method for manufacturing semiconductor device, and laser...

2007-07-24

2007-07-24

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S487000, C257SE21133, C257SE21134, C257SE21413, C257SE21703

Reexamination Certificate

active

10900463

ABSTRACT:
It is an object of the present invention to provide a method for manufacturing a crystalline semiconductor film comprising the steps of crystallizing with the use of the metal element for promoting the crystallization to control the orientation and irradiating the laser once to form a crystalline semiconductor film having a small crystal grain arranged in a grid pattern at a regular interval.In the present invention made in view of the above object, a ridge forms a grid pattern on a surface of the crystalline semiconductor film in such a way that a crystalline semiconductor film is formed by adding the metal element for promoting the crystallization to the amorphous semiconductor film and the pulsed laser whose polarization direction is controlled is irradiated thereto. As the means for controlling the polarization direction, a half-wave plate or a mirror is used.

REFERENCES:
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5756364 (1998-05-01), Tanaka et al.
patent: 5795795 (1998-08-01), Kousai et al.
patent: 5824573 (1998-10-01), Zhang et al.
patent: 5858823 (1999-01-01), Yamazaki et al.
patent: 5879977 (1999-03-01), Zhang et al.
patent: 6110770 (2000-08-01), Zhang et al.
patent: 6143661 (2000-11-01), Kousai et al.
patent: 6190949 (2001-02-01), Noguchi et al.
patent: 6232156 (2001-05-01), Ohtani et al.
patent: 6319761 (2001-11-01), Zhang et al.
patent: 6331457 (2001-12-01), Yamazaki et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6451638 (2002-09-01), Zhang et al.
patent: 6479329 (2002-11-01), Nakajima et al.
patent: 6548830 (2003-04-01), Noguchi et al.
patent: 6828179 (2004-12-01), Yamazaki et al.
patent: 6890840 (2005-05-01), Isobe et al.
patent: 2003/0122129 (2003-07-01), Yamazaki et al.
patent: 2003/0143375 (2003-07-01), Noguchi et al.
patent: 2004/0259389 (2004-12-01), Yamazaki et al.
patent: 2004/0266147 (2004-12-01), Shimomura et al.
patent: 2004/0266223 (2004-12-01), Tunaka et al.
patent: 2005/0023531 (2005-02-01), Shoji et al.
patent: 2005/0208710 (2005-09-01), Isobe et al.
patent: 07-161634 (1995-06-01), None
patent: 10-41234 (1998-02-01), None
patent: 2001-223219 (2001-08-01), None
patent: 2002-203789 (2002-07-01), None
Y. Nakata, et al., “Crystallization of an a-Si Film by a Nd:YAG Pulse Laser Beam With Linear Polarization”, (Japan Advanced Institute of Science and Technology), TFT3-3, AM-LCD 2000, pp. 265-268, Jul. 12-14, 2000.
U.S. Appl. No. 10/887,509, filed Jul. 9, 2004 “Semiconductor Device and Method for Manufacturing Semiconductor Device” (Filing Receipt, Specification, Claims, Drawings).
U.S. Appl. No. 10/878,388, filed Jun. 29, 2004 “Method for Manufacturing a Thin Film Transistor and Method for Manufacturing a Semiconductor Device” (Filing Receipt, Specification, Claims, Drawings).
Oron, M., et al. “New Experimental Evidence of the Periodic Surface Structure in Laser Annealing”, Applied Physics Letter, vol. 35, No. 10, pp. 782-784 (Nov. 15, 1979).
Fauchet, P., et al. “Surface Ripples on Silicon and Gallium Arsenide Under Picosecond Laser Illumination”, Applied Physics Letters, vol. 40, No. 9, pp. 824-826, (May 1, 1982).

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