Trench gate semiconductor device with a reduction in...

Details Trench gate semiconductor device with a reduction in... Trench gate semiconductor device with a reduction in...

2007-09-11

2007-09-11

Chambliss, Alonzo (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S389000, C257S395000, C438S259000, C438S270000

Reexamination Certificate

active

11062838

ABSTRACT:
A semiconductor device comprises: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type provided on the first semiconductor region; a trench formed in the second semiconductor region; a thick gate insulating film selectively provided in a center area of a bottom surface of the trench; a thin gate insulating film provided along a periphery of the bottom surface and on a sidewall of the trench; a third semiconductor region of the first conductivity type that is selectively provided below the thin gate insulating film provided along the periphery of the bottom surface of the trench and that extends to the first semiconductor region; a fourth semiconductor region of the first conductivity type selectively provided in the surface of the second semiconductor region; and a gate electrode filling the trench via the gate insulating film.

REFERENCES:
patent: 4672410 (1987-06-01), Miura et al.
patent: 4893160 (1990-01-01), Blanchard
patent: 5300450 (1994-04-01), Shen et al.
patent: 7049657 (2006-05-01), Matsuda
patent: 7091555 (2006-08-01), Yoshimochi
patent: 2001/0001494 (2001-05-01), Kocon
patent: 2647884 (1997-05-01), None
patent: 2000-299464 (2000-10-01), None
patent: 2001284588 (2001-10-01), None
patent: 2003158268 (2003-05-01), None

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