Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-24
2007-04-24
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S290000, C257S291000, C257S292000, C257S293000, C257S288000, C257S377000, C257S388000, C257S413000
Reexamination Certificate
active
09951153
ABSTRACT:
The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer. The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer.
REFERENCES:
patent: 4158717 (1979-06-01), Nelson
patent: 4444617 (1984-04-01), Whitcomb
patent: 4474975 (1984-10-01), Clemons et al.
patent: 4523214 (1985-06-01), Hirose et al.
patent: 4552783 (1985-11-01), Stoll et al.
patent: 4562091 (1985-12-01), Sachdev et al.
patent: 4592129 (1986-06-01), Legge
patent: 4600671 (1986-07-01), Saitoh et al.
patent: 4648904 (1987-03-01), DePasquale et al.
patent: 4695859 (1987-09-01), Guha et al.
patent: 4702936 (1987-10-01), Maeda et al.
patent: 4755478 (1988-07-01), Abernathey et al.
patent: 4764247 (1988-08-01), Leveriza et al.
patent: 4805683 (1989-02-01), Magdo et al.
patent: 4833096 (1989-05-01), Huang et al.
patent: 4863755 (1989-09-01), Hess et al.
patent: 4870470 (1989-09-01), Bass et al.
patent: 4910160 (1990-03-01), Jennings et al.
patent: 4940509 (1990-07-01), Tso et al.
patent: 4954867 (1990-09-01), Hosaka
patent: 4971655 (1990-11-01), Stefano et al.
patent: 4992306 (1991-02-01), Hochberg et al.
patent: 5034348 (1991-07-01), Hartswick et al.
patent: 5036383 (1991-07-01), Mori
patent: 5061509 (1991-10-01), Naito et al.
patent: 5140390 (1992-08-01), Li
patent: 5219613 (1993-06-01), Fabry et al.
patent: 5234869 (1993-08-01), Mikata et al.
patent: 5244537 (1993-09-01), Ohnstein
patent: 5260600 (1993-11-01), Harada
patent: 5270267 (1993-12-01), Ouellet
patent: 5285017 (1994-02-01), Gardner
patent: 5286661 (1994-02-01), de Fresart
patent: 5302366 (1994-04-01), Schuette et al.
patent: 5312768 (1994-05-01), Gonzalez
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5340621 (1994-08-01), Matsumoto et al.
patent: 5356515 (1994-10-01), Tahara et al.
patent: 5376591 (1994-12-01), Maeda et al.
patent: 5405489 (1995-04-01), Kim et al.
patent: 5413963 (1995-05-01), Yen et al.
patent: 5429987 (1995-07-01), Allen
patent: 5439838 (1995-08-01), Yang
patent: 5441797 (1995-08-01), Hogan
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5470772 (1995-11-01), Woo
patent: 5472827 (1995-12-01), Ogawa et al.
patent: 5472829 (1995-12-01), Ogawa
patent: 5482894 (1996-01-01), Havemann
patent: 5498555 (1996-03-01), Lin
patent: 5536857 (1996-07-01), Narula et al.
patent: 5541445 (1996-07-01), Quellet
patent: 5543654 (1996-08-01), Dennen
patent: 5554567 (1996-09-01), Wang
patent: 5591494 (1997-01-01), Sato et al.
patent: 5591566 (1997-01-01), Ogawa
patent: 5593741 (1997-01-01), Ikeda
patent: 5600165 (1997-02-01), Tsukamoto et al.
patent: 5639687 (1997-06-01), Roman et al.
patent: 5641607 (1997-06-01), Ogawa et al.
patent: 5648202 (1997-07-01), Ogawa et al.
patent: 5652187 (1997-07-01), Kim et al.
patent: 5656330 (1997-08-01), Niiyama et al.
patent: 5656337 (1997-08-01), Park et al.
patent: 5661093 (1997-08-01), Ravi et al.
patent: 5667015 (1997-09-01), Harestad et al.
patent: 5670297 (1997-09-01), Ogawa et al.
patent: 5674356 (1997-10-01), Nagayama
patent: 5677015 (1997-10-01), Hasegawa
patent: 5677111 (1997-10-01), Ogawa
patent: 5691212 (1997-11-01), Tsai et al.
patent: 5698352 (1997-12-01), Ogawa et al.
patent: 5709741 (1998-01-01), Akamatsu et al.
patent: 5710067 (1998-01-01), Foote
patent: 5711987 (1998-01-01), Bearinger et al.
patent: 5731242 (1998-03-01), Parat et al.
patent: 5741721 (1998-04-01), Stevens
patent: 5744399 (1998-04-01), Rostoker
patent: 5747388 (1998-05-01), Küsters et al.
patent: 5750442 (1998-05-01), Juengling
patent: 5753320 (1998-05-01), Mikoshiba et al.
patent: 5759746 (1998-06-01), Azuma
patent: 5759755 (1998-06-01), Park et al.
patent: 5783493 (1998-07-01), Yeh et al.
patent: 5786039 (1998-07-01), Brouquet
patent: 5789819 (1998-08-01), Gnade et al.
patent: 5792689 (1998-08-01), Yang et al.
patent: 5800877 (1998-09-01), Maeda et al.
patent: 5801399 (1998-09-01), Hattori et al.
patent: 5807660 (1998-09-01), Lin et al.
patent: 5817549 (1998-10-01), Yamazaki et al.
patent: 5831321 (1998-11-01), Nagayama
patent: 5838052 (1998-11-01), McTeer
patent: 5840610 (1998-11-01), Gilmer et al.
patent: 5858880 (1999-01-01), Dobson et al.
patent: 5872035 (1999-02-01), Kim et al.
patent: 5872385 (1999-02-01), Taft et al.
patent: 5874367 (1999-02-01), Dobson
patent: 5883011 (1999-03-01), Lin et al.
patent: 5883014 (1999-03-01), Chen
patent: 5933721 (1999-08-01), Hause
patent: 5948482 (1999-09-01), Brinker et al.
patent: 5960289 (1999-09-01), Tsui et al.
patent: 5962581 (1999-10-01), Hayase et al.
patent: 5968324 (1999-10-01), Cheung et al.
patent: 5968611 (1999-10-01), Kaloyeros et al.
patent: 5981368 (1999-11-01), Gardner
patent: 5985519 (1999-11-01), Kakamu et al.
patent: 5986318 (1999-11-01), Kim et al.
patent: 5994217 (1999-11-01), Ng
patent: 5994730 (1999-11-01), Shrivastava et al.
patent: 6001741 (1999-12-01), Alers
patent: 6001747 (1999-12-01), Annapragada
patent: 6004850 (1999-12-01), Lucas
patent: 6008121 (1999-12-01), Yang
patent: 6008124 (1999-12-01), Sekiguchi et al.
patent: 6017614 (2000-01-01), Tsai et al.
patent: 6017779 (2000-01-01), Miyasaka
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6022404 (2000-02-01), Ettlinger et al.
patent: 6028015 (2000-02-01), Wang et al.
patent: 6030901 (2000-02-01), Hopper et al.
patent: 6040619 (2000-03-01), Wang et al.
patent: 6054379 (2000-04-01), Yau et al.
patent: 6057217 (2000-05-01), Uwasawa
patent: 6060765 (2000-05-01), Maeda
patent: 6060766 (2000-05-01), Mehta et al.
patent: 6071799 (2000-06-01), Park et al.
patent: 6072227 (2000-06-01), Yau et al.
patent: 6080529 (2000-06-01), Ye et al.
patent: 6087064 (2000-07-01), Lin et al.
patent: 6087267 (2000-07-01), Dockrey et al.
patent: 6096656 (2000-08-01), Matzke et al.
patent: 6114255 (2000-09-01), Juengling
patent: 6121133 (2000-09-01), Iyer et al.
patent: 6124641 (2000-09-01), Matsuura
patent: 6130168 (2000-10-01), Chu
patent: 6133096 (2000-10-01), Su et al.
patent: 6133613 (2000-10-01), Yao et al.
patent: 6133618 (2000-10-01), Steiner
patent: 6136636 (2000-10-01), Wu
patent: 6140151 (2000-10-01), Akram
patent: 6140677 (2000-10-01), Gardner
patent: 6143670 (2000-11-01), Cheng et al.
patent: 6153504 (2000-11-01), Shields et al.
patent: 6156485 (2000-12-01), Tang et al.
patent: 6156674 (2000-12-01), Li et al.
patent: 6159804 (2000-12-01), Gardner
patent: 6159871 (2000-12-01), Loboda et al.
patent: 6184151 (2001-02-01), Adair
patent: 6184158 (2001-02-01), Shufflebotham et al.
patent: 6187657 (2001-02-01), Xiang et al.
patent: 6187694 (2001-02-01), Cheng
patent: 6198144 (2001-03-01), Pan
patent: 6200835 (2001-03-01), Manning
patent: 6200863 (2001-03-01), Xiang et al.
patent: 6204168 (2001-03-01), Naik et al.
patent: 6209484 (2001-04-01), Huang et al.
patent: 6218292 (2001-04-01), Foote
patent: 6225217 (2001-05-01), Usami
patent: 6235568 (2001-05-01), Murthy
patent: 6235591 (2001-05-01), Balasubramanian
patent: 6238976 (2001-05-01), Noble
patent: 6268282 (2001-07-01), Sandhu et al.
patent: 6274292 (2001-08-01), Holscher et al.
patent: 6281100 (2001-08-01), Yin et al.
patent: 6284677 (2001-09-01), Hsiao et al.
patent: 6348407 (2002-02-01), Gupta et al.
patent: 6373114 (2002-04-01), Jeng et al.
patent: 6403464 (2002-06-01), Chang
patent: 6429115 (2002-08-01), Tsai et al.
patent: 6432791 (2002-08-01), Hutter et al.
patent: 6435943 (2002-08-01), Chang et al.
patent: 6436808 (2002-08-01), Ngo et al.
patent: 6444593 (2002-09-01), Ngo et al.
patent: 6465372 (2002-10-01), Xia et al.
patent: 6486057 (2002-11-01), Yeh et al.
patent: 6486061 (2002-11-01), Xia et al.
patent: 6492688 (2002-12-01), Ilg
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DeBoer Scott Jeffrey
Moore John T.
Micro)n Technology, Inc.
Soward Ida M.
Wells St. John P.S.
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