Semiconductor device having elevated source/drain on source...

Details Semiconductor device having elevated source/drain on source... Semiconductor device having elevated source/drain on source...

Filed on

2007-03-13

Date issued

2007-03-13

Examiner

Doan, Theresa T. (Department: 2814)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S377000, C257S385000

Type

Reexamination Certificate

Status

active

Patent number

10802758

Description

ABSTRACT:
A semiconductor device disclosed herein comprises: an element isolation insulator which is formed on the surface side of a semiconductor substrate to provide electrical insulation from other elements, a height of a surface of the element isolation insulator being equal to or lower than that of a surface of the semiconductor substrate; a stopper which is formed of a material different from that of the element isolation insulator and which is at a predetermined distance from the semiconductor substrate so as to protrude from the surface of the element isolation insulator; and an elevated source/drain which is formed on a source region and a drain region so as to be elevated from the surface of the semiconductor substrate.

REFERENCES:
patent: 6137149 (2000-10-01), Kodama
patent: 6326281 (2001-12-01), Violette et al.
patent: 6545317 (2003-04-01), Hokazono et al.
patent: 2000-049348 (2000-02-01), None
patent: 2000-260952 (2000-09-01), None
patent: 2001-44138 (2001-02-01), None
patent: 2002-368227 (2002-12-01), None
Office Action issued by the Japanese Patent Office, dated Nov. 15, 2005, for Japanese Patent Application No. 2003-415319.

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