Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-20
2007-03-20
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21536
Reexamination Certificate
active
10352871
ABSTRACT:
A method of producing a semiconductor device includes, in order to electrically connect a lower layer wiring and an upper layer wiring opposite to each other with an interlayer insulation film intervening between them, a step of forming a via-hole, which exposes the lower layer wiring upward from the lower layer wiring through the interlayer insulation film, a step of forming a protective film for preventing erosion, and a step of forming a plug for electrically connecting the lower layer wiring to the upper layer wiring, wherein the protective film is formed by a CVD process in order to cover a residue having stuck to the inner wall of the hole concerned during forming the via-hole.
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O2 Plasma Treatment of Low-k Organic Silsesquioxane for Novel Intermetal Dielectric Application T. Yoshie, S. C. Chen and J. Kanamori pp. 461-465, VLSI R&D Center, Oki electric Industry Co. Ltd. Date: Unknown.
Geyer Scott B.
Oki Electric Industry Co. Ltd.
Volentine & Whitt P.L.L.C.
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