Insulating film and electronic device

Details Insulating film and electronic device Insulating film and electronic device

2007-04-24

2007-04-24

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S406000, C257S410000, C257S411000

Reexamination Certificate

active

11347318

ABSTRACT:
An insulating film includes a first barrier layer, a well layer provided on the first barrier layer, a second barrier layer provided on the well layer. The first barrier layer consists of a material having a first bandgap and a first relative permittivity. The well layer consists of a material having a second bandgap smaller than the first bandgap and having a second relative permittivity larger than first relative permittivity. The second barrier layer consists of a material having a third bandgap larger than the second bandgap and having a third relative perminivity smaller than second relative permittivity. Each of the first and second barrier layers has a thickness not smaller than 2.5 angstroms, and 2.5>(d1/ε1+d2/ε2) is satisfied where d1and d2(angstrom) are the thicknesses of the first and second barrier layers, respectively, ε1is the first relative permittivity, and ε2is the third permittivity.

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J. H. Haeni, et al., “Epitaxial Growth of the First Five Members of the Srn+1TinO3+1Ruddlesden-Popper Homologous Series” Applied Physics Letters, vol. 78, No. 21, May 21, 2001, pp. 3292-3294.
R.A. McKee, et al., “Physical Structure and Inversion Charge at a Semiconductor Interface With a Crystalline Oxide”, Science, vol. 293, Jul. 20, 2001, pp. 468-471.

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