Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-03
2007-04-03
Menz, Doug (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S204000, C257S347000, C257S610000
Reexamination Certificate
active
10972618
ABSTRACT:
An improved semiconductor device is disclosed with a NMOS transistor formed on a P-Well in a deep N-well, a PMOS transistor formed on a N-Well in the deep N-well, a first voltage coupled to a source node of the PMOS, and a second voltage higher than the first voltage coupled to the N-well, wherein the second voltage expands a depletion region associated with the PMOS and NMOS transistor for absorbing electrons and holes caused by alien particles.
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Intel Corporation, The Semiconductor Memory Book, 1978, John Wiley and Sons, pp. 39-47.
Lee Chung-Jung
Ong Tong-Chern
Duane Morris LLP
Menz Doug
Taiwan Semiconductor Manufacturing Company
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