Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-03-06
2007-03-06
Richards, N. Drew (Department: 2815)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S757000
Reexamination Certificate
active
10964841
ABSTRACT:
A method for forming a hard mask for gate electrode patterning in a semiconductor device is disclosed. The method includes providing a polysilicon layer to be etched and forming over the polysilicon layer, a nitride hardmask with a relatively high etch rate to hydrofluoric acid, as compared to the etch rate of silicon oxide. The polysilicon can then be patterned using the hardmask and the hardmask can be removed using hydrofluoric acid.
REFERENCES:
patent: 6403485 (2002-06-01), Quek et al.
Chen Chao-Cheng
Chen Chia-Jen
Chen Chien-Hao
Chen Shih-Chang
Lee Tze-Liang
Haynes and Boone LLP
Richards N. Drew
Taiwan Semiconductor Manufacturing Company , Ltd.
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