Strain-silicon CMOS with dual-stressed film

Details Strain-silicon CMOS with dual-stressed film Strain-silicon CMOS with dual-stressed film

2007-05-08

2007-05-08

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S514000, C438S694000, C438S761000, C438S942000, C257S635000, C257S638000

Reexamination Certificate

active

10989673

ABSTRACT:
A semiconductor device has an NMOS portion and a PMOS portion. A first stress layer overlies a first channel to provide a first stress type to the channel and a first modified stress layer is formed from a portion of the first stress layer overlying a second channel. A second stress layer providing a second stress type overlies the first modified stress layer and a second modified stress layer is formed from a portion of the second stress layer overlying the first stress layer.

REFERENCES:
patent: 5562770 (1996-10-01), Chen et al.
patent: 6573172 (2003-06-01), En et al.
patent: 2004/0104405 (2004-06-01), Huang et al.

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