Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-01-23

2007-01-23

Tsai, H. Jey (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S311000, C257SE21648

Reexamination Certificate

active

10095101

ABSTRACT:
The semiconductor device comprises: an insulation film72formed over a silicon substrate10, an insulation film78formed on the insulation film72and having opening82, and conductor84formed at least in the opening82. Cavity88having the peripheral edges conformed to a configuration of the opening82is formed in the insulation film72. The cavity88is formed in the region between the electrodes or the regions between the interconnection layers so as to decrease the dielectric constant between the electrodes or between the interconnection layers, whereby the parasitic capacitances of the region between the electrodes or the region between the interconnection layers can be drastically decreased, and consequently the semiconductor device can have higher speed.

REFERENCES:
patent: 5861653 (1999-01-01), Hada
patent: 6130482 (2000-10-01), Iio et al.
patent: 6146985 (2000-11-01), Wollesen
patent: 6472266 (2002-10-01), Yu et al.
patent: 6667552 (2003-12-01), Buynoski

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