Spin polarization amplifying transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S421000, C257SE29164, C257SE21575, C257SE27054, C257S565000

Reexamination Certificate

active

10956867

ABSTRACT:
An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.

REFERENCES:
patent: 5973334 (1999-10-01), Mizushima et al.
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