Semiconductor device with etch resistant electrical...

Details Semiconductor device with etch resistant electrical... Semiconductor device with etch resistant electrical...

2007-01-23

2007-01-23

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S332000, C257S333000, C257S649000, C257SE29131, C257SE29257

Reexamination Certificate

active

10948692

ABSTRACT:
A trench-structure semiconductor device is highly reliable and has an increased resistance to hydrofluoric acid cleaning or other cleaning of an insulation film between a gate electrode, which is embedded in a trench, and source electrode. In a trench-structure semiconductor device, a silicon nitride film is over the gate electrode and embedded up to a point close to the open edge on the inside of trench. A source electrode is formed in contact with the surface of the silicon nitride film and the surface of the source region.

REFERENCES:
patent: 5148257 (1992-09-01), Kishi
patent: 6861701 (2005-03-01), Williams et al.
patent: 6884684 (2005-04-01), Huang et al.
patent: 2002/0130359 (2002-09-01), Okumura et al.
patent: 2002/0137306 (2002-09-01), Chen
patent: 2003/0080378 (2003-05-01), Zundel et al.
patent: 2002-280553 (2002-09-01), None

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