Light emitting diode and fabricating method thereof

Details Light emitting diode and fabricating method thereof Light emitting diode and fabricating method thereof

2007-09-04

2007-09-04

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S080000, C257S082000, C438S022000, C438S024000, C438S034000, C438S039000

Reexamination Certificate

active

11163314

ABSTRACT:
A method for fabricating a light emitting diode (LED) is provided. Successively forming a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer on an epitaxy substrate; forming a bonding layer thereon; bonding a transferring substrate with the bonding layer; removing the epitaxy substrate; removing a part of the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer for exposing a part of the bonding layer; patterning the bonding layer to form a first and a second bonding portion isolated from each other, wherein the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer are disposed on the first bonding portion; forming a pad on the first type doped semiconductor layer; and forming a conducting wire for electrically connecting the pad and the second bonding portion.

REFERENCES:
patent: 2006/0102925 (2006-05-01), Liu et al.

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