Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-03
2007-04-03
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S256000, C438S675000, C438S399000, C438S592000, C257SE21649
Reexamination Certificate
active
10880346
ABSTRACT:
Disclosed is a method for fabricating a semiconductor device with protected conductive structures. The method includes the steps of: forming a plurality of conductive structures on a substrate, each conductive structure including a conductive layer and a hard mask insulation layer formed on the conductive layer; forming a first insulation layer on the conductive structures; forming a plurality of plugs contacted to the substrate disposed between the conductive structures by passing through the first insulation layer and having a predetermined height corresponding to a height between the conductive layer and a top of the hard mask insulation layer; forming an attack barrier layer covering top and sidewalls of the hard mask insulation layer; forming a second insulation layer on the attack barrier layer; and selectively etching the second insulation layer to form a contact hole exposing at least one of the plugs.
REFERENCES:
patent: 5840624 (1998-11-01), Jang et al.
patent: 6187672 (2001-02-01), Zhao et al.
patent: 6667228 (2003-12-01), Lee et al.
patent: 6740566 (2004-05-01), Lyons et al.
patent: 6784084 (2004-08-01), Kang et al.
patent: 6914318 (2005-07-01), Lee et al.
patent: 6930003 (2005-08-01), Yamamukai
patent: 2002/0175384 (2002-11-01), Ngai et al.
patent: 2004/0082162 (2004-04-01), Kang et al.
patent: 2004/0102039 (2004-05-01), Lim et al.
patent: 2004/0209477 (2004-10-01), Buxbaum et al.
patent: 2005/0017363 (2005-01-01), Lin et al.
Lee Min-Suk
Lee Sung-Kwon
Estrada Michelle
Hynix / Semiconductor Inc.
Tobergte Nicholas
LandOfFree
Method for fabricating semiconductor device capable of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating semiconductor device capable of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device capable of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3741925