Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-03-13

2007-03-13

Geyer, Scott B. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29342

Reexamination Certificate

active

10878051

ABSTRACT:
A semiconductor device including a semiconductor substrate, a capacitor formed above the semiconductor substrate, a first interlayer insulating film formed above the capacitor and having a trench, a wiring formed above the capacitor and formed in the trench, the wiring have a top surface flush with a top surface of the first interlayer insulating film, a first hydrogen barrier film formed in contact with the top surface of the wiring and the top surface of the first interlayer insulating film and preventing hydrogen from diffusing into the capacitor and a second interlayer insulating film formed on the first hydrogen barrier film.

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