Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-06
2007-03-06
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S674000, C257SE21295
Reexamination Certificate
active
10685171
ABSTRACT:
In one embodiment, a method including providing a semiconductor pad package having a first pad and a second pad is disclosed. A first layer comprising a first metal is deposited on the first pad using a first process. A second metal is then deposited on the first pad and the first layer using a second process. In another embodiment, the first process comprises and electroplating process, and the second process comprises a direct immersion gold (DIG) process. In a further embodiment, the first pad is a power or ground pad, and the second pad is a signal pad.
REFERENCES:
patent: 6110813 (2000-08-01), Ota et al.
patent: 6599767 (2003-07-01), Li
patent: 6709980 (2004-03-01), Gleason
patent: 6975025 (2005-12-01), LeBonheur et al.
patent: 2005/0121764 (2005-06-01), Mallik et al.
Mallik Debendra
Wood Dustin P.
Blakely , Sokoloff, Taylor & Zafman LLP
Geyer Scott B.
Intel Corporation
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