Plasma enhanced ALD of tantalum nitride and bilayer

Details Plasma enhanced ALD of tantalum nitride and bilayer Plasma enhanced ALD of tantalum nitride and bilayer

2007-03-06

2007-03-06

Chen, Bret (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S576000

Reexamination Certificate

active

10699226

ABSTRACT:
A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.

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