Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2007-03-06

2007-03-06

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S368000

Reexamination Certificate

active

11103470

ABSTRACT:
A semiconductor device having a semiconductor layer, includes: a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent atom of a semiconductor layer; and a second impurity atom having a covalent bond radius smaller than a maximum radius of the covalent bond of the semiconductor constituent atom; wherein the first and second impurity atoms are arranged in a nearest neighbor lattice site location and at least one of the first and second impurity atoms is electrically active.

REFERENCES:
patent: 5668397 (1997-09-01), Davis et al.
patent: 55-25492 (1980-07-01), None
patent: 55-28215 (1980-07-01), None
patent: 2002-76332 (2002-03-01), None
patent: 2002-368212 (2002-12-01), None
patent: 3642157 (2005-02-01), None
patent: 1998-087334 (1998-12-01), None
Jun Yamauchi, et al., “First-Principles Study on Indium atoms in Silicon”, 26th International Conference on Physics of Semiconductors Abstract, Jul. 29, 2002, p. 115.

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