Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-30
2007-01-30
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S202000, C257S316000, C257S317000, C257S318000, C257S319000, C257S366000, C257S401000
Reexamination Certificate
active
10988597
ABSTRACT:
A semiconductor device includes a semiconductor substrate having a first conductivity type. A pair of source/drain areas having a second conductivity type is formed on a surface of the semiconductor substrate. A gate insulating film is provided on a channel area between the source/drain areas. A gate electrode having the first conductivity type is provided on the gate insulating film. The gate electrode has a first portion located above a channel area and second portions located above the source/drain area. The concentration of majority carriers in the second portion is lower than that in the first portion.
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Hiroshi Kujirai, et al. “Data Retention Time in DRAM with WSix/P+poly-Si Gate NMOS Cell Transistors”, 2001 IEEE, pp. 18.2-18.2.4.
Aochi Hideaki
Yasutake Hitomi
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