Upside-down magnetoresistive random access memory

Details Upside-down magnetoresistive random access memory Upside-down magnetoresistive random access memory

2007-04-17

2007-04-17

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S104000, C365S189080

Reexamination Certificate

active

11223159

ABSTRACT:
An upside-down MRAM comprises a sense transistor and a plurality of sense lines. A first end of the sense transistor is electrically connected to a low voltage. The sense lines are electrically connected in parallel between a high voltage and a second end of the sense transistor. Each of the sense lines has a control logic and at least one memory bit, and the memory bit is connected in series between the high voltage and the control logic.

REFERENCES:
patent: 2004/0246761 (2004-12-01), Nishihara et al.
patent: 2006/0120146 (2006-06-01), Ezaki et al.

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