Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-16
2007-01-16
Ngo, Ngan V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S350000, C257S627000, C257SE27112
Reexamination Certificate
active
11061645
ABSTRACT:
There is provided a semiconductor device which is formed on a semiconductor substrate and allows effective use of the feature of the semiconductor substrate, and there is also provided a method of manufacturing the same. An N-channel MOS transistor including a P-type body layer (3a), and a P-type active layer (6) for body voltage application which is in contact with the P-type body layer (3a) are formed on an SOI substrate which is formed to align a <110> crystal direction of a support substrate (1) with a <100> crystal direction of an SOI layer (3). A path connecting the P-type body layer (3a) and the P-type active layer (6) for body voltage application is aligned parallel to the <100> crystal direction of the SOI layer (3). Since hole mobility is higher in the <100> crystal direction, parasitic resistance (Ra, Rb) can be reduced in the above path. This speeds up voltage transmission to the P-type body layer (3a) and improves voltage fixing capability in the P-type body layer (3a).
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Maeda Shigenobu
Maegawa Shigeto
Matsumoto Takuji
Ngo Ngan V.
Renesas Technology Corp.
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