Storage device with resistive memory cells enduring...

Details Storage device with resistive memory cells enduring... Storage device with resistive memory cells enduring...

2007-01-23

2007-01-23

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S195000, C365S189070

Reexamination Certificate

active

10851897

ABSTRACT:
A storage device comprises a memory element and an applying unit for applying a voltage to the memory element wherein the memory element changes its characteristic to record thereon information with application of a voltage to the memory element by the applying unit, the memory element further changing its characteristic when the same information is recorded on the memory element continuously. The memory element has a recording method which comprises the steps of detecting content of information that has already been recorded on the memory element when the information is recorded, comparing the information that has already been recorded on the memory element with information to be recorded on the memory element, applying a voltage to the memory element to make an ordinary information recording process if the two information are different from each other and disabling the ordinary information recording process when the two information are identical to each other. Thus, the storage device according to the present invention can satisfactorily carry out recording operations even when information is recorded continuously.

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Silver Incorporation in Ge-Se glasses used in programmable metallization cell devices,Journal of Non-Crystallize Solids, 299-302 (2002) 1023,2027.

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